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General Chemistry ›› 2017, Vol. 3 ›› Issue (4): 182-193.DOI: 10.21127/yaoyigc20170014

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Growth of Transition Metal Dichalcogenides and Directly Modulating Their Properties by Chemical Vapor Deposition

Lei Tonga , Tiande Liua , Renli Liangb, Shuai Wangb, Jingwen Chenb, Jiangnan Daib*(), Lei Yea*()   

  1. a School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
    b Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China
  • Received:2017-09-12 Accepted:2017-11-03 Online:2017-12-01 Published:2017-12-01
  • Contact: Jiangnan Dai, Lei Ye


The layered structure of transition metal dichalcogenides (TMDs) gives rise to many novel properties for functional applications in a wide range of fields. However, successful synthesis of TMDs and directly modulating properties of TMDs during the growth process are facing great challenges, which limits their future practical applications. In this review, we focus on current state of the art chemical vapor deposition (CVD) synthesis of TMDs alloys, convenient methods to modulate properties of TMDs by CVD. Then, TMDs-based lateral and vertical heterostructures utilizing CVD methods are reviewed. Finally, we summarize patterned growth of TMDs briefly.


Key words: transition metal dichalcogenides, chemical vapor deposition, doping and alloying, heterostructure growth, pattern growth

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