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General Chemistry ›› 2022, Vol. 8 ›› Issue (3-4): 220006-220006.DOI: 10.21127/yaoyigc20220006

Special Issue: Porphyrins

• Reports • Previous Articles     Next Articles

Steric Hindrance Functionalized Porphyrins as Charge Trapping Elements for Organic Field Effect Transistor Memory

Meng Xie, Linyi Bian, Hao Chong, Zhewei Zhang, Guangyi Liu, and Linghai Xie*   

  1. Centre for Molecular Systems and Organic Devices, State Key Laboratory of Organic Electronics and Information Displays, Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials, Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing, Jiangsu 210023, China
  • Received:2022-05-03 Revised:2022-06-01 Online:2022-12-30 Published:2022-12-21
  • About author:iamlhxie@njupt.edu.cn (L. X.)

Abstract: Two novel fluorenyl-porphyrins 2Flu-TPP and 4Flu-TPP serving as charge trapping elements are designed and synthesized through BF3.Et2O catalyzed Friedel-Crafts reaction. With steric hindrance building blocks of fluorene units, 2Flu-TPP and 4Flu-TPP present highly nonplanar 3-dimensional structure, which could effectively inhibit molecular packing and intermolecular arrangement of porphyrins. As charge trapping elements, porphyrin groups provide the hole trapping sites, while fluorene units act as a hole blocking group to reduce the formation of leakage current paths. The pentacene-based organic field effect transistor memory devices based on 2Flu-TPP and 4Flu-TPP show memory windows of 48.93 and 49.20 V, respectively. The 2Flu-TPP device shows reliable endurance property with a large ON/OFF current ratio (1.1×107) and good charge retention time (2.41×105 after 2×103 s). This study suggests that porphyrin based steric hindrance small molecular elements have great promise for high-performance organic field effect transistor memory.

Key words: porphyrin, Friedel-Crafts reaction, OFET memory, steric hindrance

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