Abstract: The present investigation explores memory behavior in pristine ferroelectric liquid crystals (FLC) and their composites. The induced non-volatile memory traces back its origin from the reconfiguration of helical ar-range- ment of LC molecules under the influence of synchronous cycle of temperature-voltage. The addition of SiO₂ quantum dots provides pronounceable memory behavior, which can be applied for coding optical or electrical field motivated LC based storage devices. The measurement of the polarized state of the FLC molecules and their composites has been carried out dielectrically upto 1 h projecting non-volatile memory effects. The analysis of geometrical arrangement of LC molecules and surface effects due to the incorporation of quantum dots and simultaneous stimulations of temperature and voltage cycle has been reckoned in the study. The traps on the surface of the dispersed quantum dots capture mobile ions and force the LC molecules in the vicinity of quantum dots to display reminiscences of switched state. The dispersion of SiO₂ ensures efficient memorized orientation in the formulated composites resulting in steady memory behavior.

Key words: ferroelectric liquid crystals, SiO₂, quantum dots, memory effects, surface effects